Description
IS64WV10248BLL are very high-speed, low
power, 1M-word by 8-bit CMOS static RAM. The
IS61WV10248ALL/BLL and IS64WV10248BLL are fab
–
ricated using
ISSI
‘s high-performance CMOS technol
–
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61WV10248ALL/BLL and IS64WV10248BLL
operate from a single power supply and all inputs are
TTL-compatible.
The IS61WV10248ALL/BLL and IS64WV10248BLL are
available in 48 ball mini BGA and 44-pin TSOP (Type
II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
CE
OE
WE
1M X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Feature
High-speed access times: 8, 10, 20 nsHigh-perfomance, low-power CMoS processMultiple center power and ground pins for greaternoise immunity
Easy memory expansion with CE and OE options
CE power-down
Fully static operation: no clock or refreshrequired
TTL compatible inputs and outputsSingle power supply
– VoD 1.65V to 2.2V (IS61WV10248ALL)speed = 20ns for Vcc = 1.65V to 2.2VVod 2.4V t 3.6V(S61/64WV10248BLL)speed = 10ns for Vcc = 2.4V to 3.6Vspeed = 8ns for Vcc = 3.3V + 5%Packages available
48-ball miniBGA (9mm x 11mm)- 44-pin TsoP (Type ll)
Industrial and Automotive Temperature Support
Lead-free available
