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SST12LP15B-QVCE 2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier
Home / Electronic Components / Integrated Circuits

SST12LP15B-QVCE 2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier

  • TL082CN-1 General purpose JFET dual operational amplifiers
  • SP3243EBEA-L 3 Driver/5 Receiver Intelligent +3.0V to +5.5V RS-232 Transceivers

SST12LP15B-QVCE 2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier

Categories: Electronic Components, Integrated Circuits
  • TL082CN-1 General purpose JFET dual operational amplifiers
  • SP3243EBEA-L 3 Driver/5 Receiver Intelligent +3.0V to +5.5V RS-232 Transceivers
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  • Description

Description

SST12LP15B is a versatile power amplif
ier based on the highly-reliable InGaP/
GaAs HBT technology. Easily configured for high-linear operation meeting the
EVM requirements for 256 QAM applications
, and for high-efficiency applications
with excellent power-added efficiency while operating ov
er the 2.4- 2.5 GHz fre-
quency band. Configured for high efficiency, SST12LP15B will typically meet the
802.11g spectrum mask at
23 dBm with 270 mA. Configured for high linearity,
SST12LP15B will provide less than 2.5% EVM, up to 20 dBm, with MCS7-HT40
modulation, and less than 1.75% EVM, up to 18 dBm, with MCS9-VHT40 modula-
tion. This power amplifier also features easy board-level usage along with high-
speed power-up/down control through the reference voltage pins. The
SST12LP15B is offered in both a 3mm
x 3mm, 16-contact VQFN package and a
2mm x 2mm, 12-contact XQFN package.

Application

WLAN (IEEE 802.11b/g/n/256 QAM
Cordless phones
2.4 GHz ISM wireless equipment

Feature

High Gain:
– More than 32 dB gain across 2.4 2.5 GHz over temperature -40°C to +85C
Configured for High Linearity20 dBm at 2.5% DEVM,MCS7-HT40, 200mA18 dBm at 1.8% DEVMMCS9-VHT40,180 mA-23 dBm typical spectrum mask compliance, MCSO-20
Configured for High Efficiency23 dBm at 3% DEVM, 802.11g OFDM 54 Mbps, 310mA25.5 dBm typical spectrum mask compliance, 802.11b,1bps>29 dBm P1dB- Meets 802.11g OFDM ACPR requirement up to 26 dBmHigh power-added efficiency/l ow operating current Low IREF current for power-up/down control-lREF <2 mA
High-speed power-up/downTurn on/off time (10%- 90%%) <100 nsyo’cal power-up/down delay with driver delay included
Low Shut-down Current:2uA

High temperature stability- Typically 1 dB gain/power variation between 0°C to+85°C
Excellent On-chip power detection20 dB linear dynamic rangeTemperature- and VSWR-insensitive
Simple input/output matching
Packages available
-16-contact VQFN – 3mm x 3mm- 12-contact XQFN – 2mm x 2mm

 

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