Description
SST12LP15B is a versatile power amplif
ier based on the highly-reliable InGaP/
GaAs HBT technology. Easily configured for high-linear operation meeting the
EVM requirements for 256 QAM applications
, and for high-efficiency applications
with excellent power-added efficiency while operating ov
er the 2.4- 2.5 GHz fre-
quency band. Configured for high efficiency, SST12LP15B will typically meet the
802.11g spectrum mask at
23 dBm with 270 mA. Configured for high linearity,
SST12LP15B will provide less than 2.5% EVM, up to 20 dBm, with MCS7-HT40
modulation, and less than 1.75% EVM, up to 18 dBm, with MCS9-VHT40 modula-
tion. This power amplifier also features easy board-level usage along with high-
speed power-up/down control through the reference voltage pins. The
SST12LP15B is offered in both a 3mm
x 3mm, 16-contact VQFN package and a
2mm x 2mm, 12-contact XQFN package.
Feature
- High Gain:
_ More than 32 dB gain across 2.4 2.5 GHz over temperature -40°C to +85C
Configured for High Linearity
20 dBm at 2.5% DEVM, MCS7-HT40,200mA18 dBm at 1.8% DEVM, MCS9-VHT40.180 mA23 dBm typical spectrum mask compliance, MCSO-20
Configured for High Efficiency23 dBm at 3% DEVM, 802.11g OFDM 54 Mbps, 310mA25.5 dBm typical spectrum mask compliance, 802.11b1Mbps->29 dBm P1dB- Meets 802.11g OFDM ACPR requirement up to 26 dBmHigh power-added efficiency/Low operating currentLow IREF current for power-up/down control-IREF <2 mA
High-speed power-up/down
Turn on/off time (10%- 90%) <100 nsTypical power-up/down delay with driver delay included200 ns
Low Shut-down Current:2uA - High temperature stability- Typically 1 dB gain/power variation between 0°C to+85°0
Excellent On-chip power detection20 dB linear dynamic range- Temperature- and VSWRinsensitive
Simple input/output matching
Packages available
-16-contact VQFN – 3mm x 3mm- 12-contact XQFN – 2mm x 2mm
All non-Pb (lead-free) devices are RoHS compliant
