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MT48LC16M16A2P-75ITD SDR SDRAM Fully synchronous
Home / Electronic Components / Integrated Circuits

MT48LC16M16A2P-75ITD High speed CMOS dynamic random access memory SDR SDRAM Fully synchronous

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High speed CMOS dynamic random access memory

Categories: Electronic Components, Integrated Circuits
  • NCP1083DER2G Material Composition Declaration Integrated PoE-PD and DC-DC Converter Controller, 40 W, with Auxiliary Supply
  • MT29F1G08ABADAWP-ITD flash memory IC 1Gbit Parallel 48-TSOP I
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  • Description

Description

MT48LC16M16A2P-75ITD High speed CMOS dynamic random access memory SDR SDRAM Fully synchronous

 

Specs

• PC100- and PC133-compliant
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal, pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge
and auto refresh modes
• Self refresh mode (not available on AT devices)
• Auto refresh
– 64ms, 8192-cycle refresh (commercial and
industrial)
– 16ms, 8192-cycle refresh (automotive)
• LVTTL-compatible inputs and outputs
• Single 3.3V ±0.3V power supply

 

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