Description
MT29F1G08ABADAWP-ITD flash memory IC 1Gbit Parallel 48-TSOP I
NAND Flash technology provides a cost-effective solution for applications requiringhigh-density,solid-state storage. The MT29F2GxxAxD is a 2Gb NAND Flash memorydevice.Micron NAND Flash devices include standard NAND Flash features as well asnew features designed to enhance system-level performance.Micron NAND Flash devices use a highly multiplexed 8-bit bus (I/O[7:0]) to transferdata,addresses,and instructions.The five command pins (CLE,ALE,CE#RE#,WE#)implement the NAND Flas command bus interface protocol.Additional pins controlhardware write protection (WP#),monitor the device ready/busy (R/B#) state,andenable block lock functionality (LOCK). This hardware interface creates a low-pin-count device with a standard pinout that isthe same from one density to another, allowing future upgrades to higher densities with-out board redesign. The MT29F2G deyice contains 2,048 blocks. Each block is subdivided into 64 program-mable pages. Each page consists of 2,112 bytes. The pages are further divided into a2,048-byte data storage region with a separate 64-byte area. The 64-byte area is typicallyused for error management functions. The contents ofeach page can be programmed in tPROG (TYP), and an entire block canbe erased in tBERS (TYP).On-chip controllogic automates PROGRAM and ERASE oper-ations to maximize cycle endurance.PROGRAM/ERASE endurance is specified at100,000 cycles using appropriate error correction code (ECC) and error management
